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BAR63V-02V
Vishay Semiconductors
RF PIN Diode - Single in SOD-523
Description
Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diode are wireless, mobile and TV-systems.
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1
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16863
Features
* Low forward resistance * Space saving SOD-523 package with low series inductance * Very small reverse capacitance * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
RF-signal tuning Mobile, wireless and TV-Applications
e3
Mechanical Data
Case: SOD-523 Plastic case Weight: approx. 1.6 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Applications
For frequency up to 3 GHz
Parts Table
Part BAR63V-02V Ordering code BAR63V-02V-GS18 or BAR63V-02V-GS08 C Marking Remarks Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Symbol VR IF Tj Tstg Value 50 100 150 - 55 to + 150 Unit V mA C C
Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Junction soldering point Test condition Symbol RthJS Value 100 Unit K/W
Document Number 85642 Rev. 1.5, 29-Jun-05
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BAR63V-02V
Vishay Semiconductors Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Reverse current Forward voltage Diode capacitance Forward resistance Test condition IR = 10 A VR = 35 V IF = 100 mA f = 1 MHz, VR = 0 f = 1 MHz, VR = 5 V f = 100 MHz, IF = 1 mA f = 100 MHz, IF = 5 mA f = 100 MHz, IF = 10 mA Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA Symbol VR IR VF CD CD rf rf rf trr 0.28 0.23 2.0 1.1 0.9 115 2.0 0.3 Min 50 10 1.2 Typ. Max Unit V nA V pF pF ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
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rf - Forward Resistance ( W )
5 4 3 2 1 0 0.1
f = 100 MHz
100.00
I F - Forward Current ( mA )
10.00
1.00
0.10
18341_1
1.0 10 IF - Forward Current ( mA )
100
0.01 0.5
18325
0.6
0.7
0.8
0.9
1.0
VF - Forward Voltage ( V )
Figure 1. Forward Resistance vs. Forward Current
Figure 3. Forward Current vs. Forward Voltage
0.30
CD - Diode Capacitance ( pF )
120 f = 1 MHz
V R - Reverse V oltage ( V )
0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 20 24 28
100 80 60 40 20 0 0.01
0.1
1.0
10
100
1000
18333
VR - Reverse V oltage (V)
18329
IR - Reverse Current ( A )
Figure 2. Diode Capacitance vs. Reverse Voltage
Figure 4. Reverse Voltage vs. Reverse Current
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Document Number 85642 Rev. 1.5, 29-Jun-05
BAR63V-02V
Vishay Semiconductors
12 10
I F - Forward Current ( mA )
8 6 4 2 0 -2 -4 -6 -8 -50 0 50
IF = 10 mA IR = 6 mA i rr = 3 mA
100
150
200
18337
Recovery Time ( ns )
Figure 5. Typical Charge Recovery Curve
Package Dimensions in mm (Inches)
0.15 (0.006)
ISO Method E
0.22 (0.008) 0.16 (0.006) 1.6 (0.062)
0.8 (0.031) Mounting Pad Layout 1.35 (0.053)
0.3 (0.012)
0.15 A
A 1.2 (0.047)
0.39 (0.015) 0.35 (0.014)
16864
Document Number 85642 Rev. 1.5, 29-Jun-05
0.6 (0.023)
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BAR63V-02V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85642 Rev. 1.5, 29-Jun-05

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